* RDS(ON) ≤ 100 mΩ @ VGS=5.0V, ID=7.5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
* SYMBOL Power MOSFET
* ORDE.

* FEATURES * RDS(ON) ≤ 100 mΩ @ VGS=5.0V, ID=7.5A * Low capacitance * Low gate charge * Fast switching capability *.

The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES * RDS(ON) ≤ 100 mΩ @ VGS=5.0V, I.

15N03GH

15N03H

15N03K

15N03L

15N05

15N10

15N12

15N120A

15N120NDA

15N15

15N15-HC

15N20

15N25